Vishay Intertechnology 150 V MOSFET Increases Efficiency With the Industry's Lowest RDS of 5.6 MW and RDS *Qg FOM of 336 MW*nC
November 21, 2024
November 21, 2024
MALVERN, Pennsylvania, Nov. 21 -- Vishay Intertechnology Inc. issued the following news release on Nov. 20, 2024:
To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance . . .
To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance . . .