Scientists uncovered mystery of important material for semiconductors at the surface
September 14, 2023
September 14, 2023
OAK RIDGE, Tennessee, Sept. 14 -- The U.S. Department of Energy's Oak Ridge National Laboratory issued the following news release:
Using the ultrahigh-vacuum atomic force microscope at DOE's Center for Nanophase Materials Sciences at ORNL, researchers found unique environmentally induced ferroelectric phase transitions in hafnium zirconium oxide, a material important in developing advanced semiconductors. Credit: Arthur Baddorf/ORNL, Dept. of Energy
A team of scientists . . .
Using the ultrahigh-vacuum atomic force microscope at DOE's Center for Nanophase Materials Sciences at ORNL, researchers found unique environmentally induced ferroelectric phase transitions in hafnium zirconium oxide, a material important in developing advanced semiconductors. Credit: Arthur Baddorf/ORNL, Dept. of Energy
A team of scientists . . .